An electrostatic actuator for fatigue testing of low-stress LPCVD silicon nitride thin films

نویسندگان

  • Wen-Hsien Chuang
  • Rainer K. Fettig
  • Reza Ghodssi
چکیده

An electrostatic actuator and mechanical-amplifier (MA) device has been designed and fabricated to study fatigue properties of low-stress LPCVD silicon nitride thin films. The device consists of two resonators connected serially with a common torsion bar. When pumping electrostatic energy into the first resonator, the energy is transferred to the second resonator via the common torsion bar. The mechanical m A d t f e t ( ©

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nano-scale fatigue study of LPCVD silicon nitride thin films using a mechanical-amplifier actuator

This paper describes a nano-scale tensile test to study the fatigue properties of LPCVD silicon nitride thin films using a novel electrostatic actuator design. Mechanical-amplifier devices made in silicon nitride thin films can apply controllable tensile stress (2.0–7.8 GPa) to test structures with relatively low actuation voltages (5.7–35.4 VRMS) at the resonant frequencies of the devices. The...

متن کامل

Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices

In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and  silicon  substrates  using  single  ion  beam  sputtering  technique.  The  physical  and  chemical properties  of  prepared  films  were  investigated  by  different  characterization  technique.  X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...

متن کامل

Out-of-plane microstructures using stress engineering of thin films

A new method is presented to fabricate out-of-plane microstructures using traditional planar micromachining technology. Composite LPCVD polysilicon/silicon nitride beams are fabricated to study this concept. Polysilicon films ranging from 0.5 μm to 1.3 μm, and silicon nitride films ranging from 150 to 450 nm, were used to fabricate various thickness ratios of composite out-of-plane microstructu...

متن کامل

Theoretical analysis of the effect of static charges in silicon-based dielectric thin films on micro- to nanoscale electrostatic actuation

Silicon-based dielectric thin films such as SiO2 and Si3N4 are commonly used as insulation layers in electrostatic microactuators to protect the device from short circuiting if the electrodes are in contact. However, dielectric films can store bulk and/or surface static charges. In this paper, the effect that these static charges have on the force applied by an electrostatic actuator is analyze...

متن کامل

Determination of the density of silicon–nitride thin films by ion-beam analytical techniques (RBS, PIXE, STIM)

This work presents the investigation of some commercially available and commonly used Si3N4 foils prepared with LPCVD technique. The density and the stoichiometry of these films were determined by Rutherford backscattering spectroscopy and profilometry, while the study of impurities was achieved with particle induced X-ray emission method. It was found that the density of the studied Si3N4 film...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005